unisonic technologies co., ltd UT4422 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-206.b n-channel enhancement mode field effect transistor ? description the UT4422 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 15m ? @v gs = 10 v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? ordering information ordering number package packing UT4422g-s08-r sop-8 tape reel
UT4422 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-206.b ? pin configuration
UT4422 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-206.b ? solute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 gate-source voltage v gss 20 v continuous drain current (t a =25c) (note 1) i d 11 a pulsed drain current i dm 50 a power dissipation (t c =25c) p d 3 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) ? thermal data parameter symbol ratings unit junction to ambient ja 59 ~ 75 junction to case jc 16 ~ 24 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =24 v, v gs =0 v 0.003 1 a gate-body leakage current i gss v ds =0 v, v gs = 20 v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 1.8 3 v on state drain current i d(on) v ds =5v, v gs =4.5 v 40 a v gs =10v, i d =11a 12.6 15 static drain-source on-resistance r ds(on) v gs =4.5 v, i d =10 a 19.6 24 m ? dynamic parameters input capacitance c iss 800 1040 1250 output capacitance c oss 140 180 220 reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1mhz 80 110 140 pf switching parameters total gate charge q g 15 19.8 24 gate source charge q gs 2.5 gate drain charge q gd v ds =15v, v gs =10v, i d =11a 3.5 nc turn-on delay time t d(on) 4.5 6.5 turn-on rise time t r 3.9 5.5 turn-off delay time t d(off) 17.4 25 turn-off fall-time t f v gs =10v,v ds =15v,r l =1.35 ? , r gen =3 ? 3.2 5 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =1a,v gs =0v 0.75 1 v maximum body-diode continuous current i s 4.3 a body diode reverse recovery time t rr 17.5 21 ns body diode reverse recovery charge q rr i f =11 a, di/dt=100a/ s 9.3 12 nc
UT4422 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-206.b ? typical characteristics drain current,i d (a) drain current,i d (a) drain to source on-resistance, r ds(on) (m ) normalized on-resistance body-diode characteristics gate to source voltage,v gs (v) drain to source on-resistance, r ds(on) (m ) on-resistance vs. gate-source voltage 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 reverse drain current,i s (a) 0.0 0.2 0.4 0.6 0.8 1.0 body diode forward voltage,v sd (v) 60 50 40 30 20 2 4 6 810 125 25 10 i d =10a 125 25 pulse width 80 s, duty cycle 0.5%. pulse width 80 s, duty cycle 0.5%.
UT4422 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-206.b ? typical characteristics(cont.) 30 25 20 15 10 5 0 0 250 500 750 1000 1250 1500 10 8 6 4 2 0 048121620 gate-charge characteristics gate charge,q g (nc) drain to source voltage,v ds (v) capacitance characteristics v ds =15v i d =11a c iss c oss c rss 100.0 10.0 1.0 0.1 0.1 1 10 100 maximum forward biased safe operating area drain to source voltage,v ds (v) t j(max) =150 t a =25 single pulse power rating junction-to-ambient pulse width (s) 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t j(max) =150 t a =25 50 r ds(on) limited 10 s 100 s 1ms 10s dc 1s 0.1s 10ms 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) normalized maximum transient thermal impedance normalized transient thermal resistance,z ja in descending order d=0.5,0.3,0.1, 0.05,0.02,0.01,single pulse d=t on /t t j,pk =t a +p dm .z ja . ja ja =40 /w single pulse p dm t o n t
UT4422 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-206.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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